Samsung 512GB eUFS 3. 0 Storage Chips Announced Regarding Next-Gen Flagship Smartphones

Samsung 512Gb eUFS 3.0

Samsung is expanding its smartphone storage portfolio and has started mass producing a 512GB chip with installed eUFS 3.0 specifications. This is the first Samsung chip to accompany eUFS 3.0 specifications and is touted to convey double the speed of the past eUFS 2.1 storage. To review, Samsung just launched new UFS 2.1 chips in January, and these chips might be half as fast as the upcoming Samsung memory chips with the new eUFS 3.0 specs. Samsung claims that 512GB eUFS 3.0, alongside a 128GB alternative, will launch this month.

The company claims that the new eUFS 3.0 chips is four times faster than that of a SATA strong state drive (SSDs) and 20 times faster than a run of the mill microSD card, allowing premium smartphones to exchange a full-HD motion picture to a PC in about three seconds. Its read and compose speeds are at 410MBps individually. This read rate is twofold than eUFS 2.1 chips declared in January, and the composing speed has additionally been improved by 50 percent, Samsung claims.

Arbitrary read and compose speeds are claimed to be up to 63,000 IOPS and 68,000 IOPS individually, an increase of 36 percent over the current eUFS 2.1 industry specifications, and about 630 times faster than general microSD cards (100 IOPS). This upgrade enables various applications to run all the while on smartphones, and improve responsiveness. Samsung claims that the new mobile memory will likewise have the capacity to support consistent client encounters in future smartphones with ultra-huge high-resolution screens.

While Samsung will initially introduce the 512GB and 128GB eUFS 3.0 chips, it will likewise deliver 1TB and 256GB models in the second 50% of the year.